Vertical heterojunction of MoS2 and WSe2

The development of experimental methods
¹
to create stacked structures of layered 2D materials with atomic-plane precision provides opportunities to study a variety of van der Waals heterojunctions that is difficult to fabricate with traditional growth methods. Here, we report the vertical integration of two 2D TMD materials, MoS
₂
and WSe
₂
, to form van der Waals heterojunction. We show that the electrical properties of the heterojunction are controlled by gate voltage and rectification is observed with forward/reverse current ratio ~ 100.