TCAD-based analysis of radiation-hardness in silicon detectors

The application of a general-purpose device-simulator to the analysis of silicon microstrip radiation detector is described. Physical models include charge-collection dynamics, as well as radiation-induced deep-level recombination centers. Realistic description of multiple-strip devices can be accounted for. To allow for validation of the analysis tool, actual detectors have been measured, before and-after being irradiated with neutrons. Simulation predictions agree well with experiments. Limitations of the adopted model are discussed, with reference to simulation-based comparison with higher-order models.