Design of a Mesfet based Low Noise Amplifier with Improved Noise Figure for Low Power Wireless Applications in 2-3 GHz

A Low Noise Amplifier (LNA) based on NEC 0.3µm GaAs MESFET technology has been designed with a modified cascode configuration which makes use of two common source transistors. In the 2-3GHz range, the designed LNA has a noise figure less than 0.65dB, maximum intrinsic gain of 18.4dB, P1dB of 2dBm, IIP3 of -1.6dBm and 20mW power consumption at a supply voltage of 3V. The dynamic range of the designed LNA is 60.6dB. The characteristic impedance is chosen as 50O. The custom layout of the proposed LNA has been designed.