Enhancement of high-Ns electron mobility in sub-nm EOT Ge n-MOSFETs

This paper presents the peak mobility of 787 cm2/Vs and high-Ns mobility (@Ns=1x10
¹³
cm
^-2
) of 429 cm
²
/Vs in Ge n-MOSFETs with sub-nm EOT, which are the highest ones to date among scaled Si and Ge MOSFETs. This can be achieved by intermixing of Y atoms with GeO2, which offers the strong hygroscopic tolerance and thermal process stability as well as interface improvement.