Physico-chemical properties and electrophysical characteristics of niobium nitride-gallium arsenide heterostructures

For niobium nitride-gallium arsenide heterostructures the effect of interaction between phases on the contact electrophysical characteristics was studied. If was found that the characteristics depended nonmonotonically on both nitrogen percentage in the working gas mixture and annealing temperature. This may be related to compositional and structural nonuniformities of the interface.