Subband structure engineering for performance enhancement of Si MOSFETs

This paper presents a new strategy to enhance the current drive of Si MOSFETs, utilizing a subband structure engineering. It is found that SOI MOSFETs with SOI thickness thinner than the inversion layer of bulk MOSFETs can provide higher current drive than bulk MOSFETs, because of the significant modulation of the subband structure. This performance enhancement is attributed to the increase in both the inversion-layer mobility and the inversion-layer capacitance.