High performance substitutional-gate MOSFETs using MBE source-drain regrowth and scaled gate oxides

We report high transconductance MOSFETs with scaled dielectric (1.2 nm EOT) fabricated using a substitutional-gate process with MBE source/drain regrowth. A 50 nm-L
_g
and 1.2 nm EOT device shows 0.8 mA/μm on-current at V
_gs
-V
_th
= 0.8 V and V
_ds
= 0.5 V and 1.0 mS/μm peak transconductance at V
_ds
= 0.5 V which are 25% and 40% higher than those of a 1.65 nm EOT control device, respectively. Transmission line method (TLM) measurements indicate 0.8 Ohm-μm
²
metal-semiconductor contact resistivity and 18 Ohm sheet resistance of the regrown N+ source-drain contact layer.