High-rate deposition of thin films by high power ion beam target evaporation

The pulsed ion beam ablation and deposition technique was used to produce the stoichiometric AL
2
O
3
films, the diamond-like carbon and boron nitride films. The angular distributions of the ablation plasma particles on the polycristalline Ti, Zn and Pb targets have been measured. The TEMP accelerator ( 300 ke V ion energy, 100–150 A/cm
²
current density on target, (3–4.5)×10
⁷
W/cm
²
power density on target, 0.3 Hz pulse repetition rate, 10
⁻⁴
Torr vacuum was used. The film growth rate was 0.03–0.5 cm/s. Auger electron spectroscopy, Rutherford backscattering, small - angle x-ray diffraction, transmission electron microscopy and diffraction were used to examine the deposited films.