High-Performance Junctionless MOSFETs for Ultralow-Power Analog/RF Applications

In this letter, we demonstrate the usefulness of ultralow-power (ULP) junctionless (JL) MOSFETs in achieving improved analog/RF metrics as compared to nonunderlap and underlap MOSFETs. At a drain current (
I
_ds
) of 10 μA/μm, JL devices achieve two times higher values of cutoff frequency (
fT
) and maximum oscillation frequency (
f
_MAX
) along with 65% improvement in voltage gain (
A
_VO
) in comparison to conventional nonunderlap MOSFETs. ULP JL devices, which do not require source/drain (S/D) profile optimization, can perform comparably to underlap devices, thereby relaxing the stringent process constraints associated with S/D profile optimization in nanoscale devices. The results highlight new opportunities for realizing future ULP analog/RF design with JL transistors.