Study of SiOx-based complementary resistive switching memristor

The electrical characteristics of SiO
x
-based complementary resistive switching (CRS) memristor have been investigated. Post-deposition annealing (PDA: 500°C 5min in O
2
) of TaN/SiO
2
/n
⁺⁺
Si-substrate CRS memristor has been found to reduce operational variation in device characteristics, as well as improve the electrical stability during repeated switching. In this work, we have also studied the effects of sweeping polarity, operating temperature, electrode material and dimension scaling. Our experimental results not only provide additional insights into optimization of the SiO
x
-based CRS memory but also help in constructing a physical picture for the switching mechanism.