AlGaAs/GaAs heterojunction bipolar transistor reliability: Device modeling and SPICE simulation

The physical mechanisms contributing to the reliability of AlGaAs/GaAs heterojunction bipolar transistor (HBT) are investigated, and a new AlGaAs/GaAs HBT model for SPICE circuit simulation is presented. Such a model includes the effects of base and collector leakage currents and the stress-induced abnormal base current, thus allowing the simulation of the performance of HBT circuits subjected to the electrical/thermal stress test (i.e., burn-in test).