Arsenic vs. phosphorus emitters for radiation hardened power transistors

The intent of this work was to determine what type of emitter, either arsenic or phosphorus, would yield a superior radiation tolerance. This was accomplished by fabricating devices of each type with thin heavily doped base and collector regions. All devices were irradiated to a neutron fluence of 3 × 10
¹⁴
n/cm
²
, 1 MEV equivalent. The results of this investigation did not support the hypothesis that arsenic was superior to phosphorus.