Realization of 100 V ultra-thin single-crystal silicon LDMOS

Video streaming and fast processing in System-in-Foil (SiF) applications require high performance and ultra-thin (<; 20 μm), high-voltage transistors on foil. Chipfilm™ technology offers an efficient way of precisely defining the thickness of ultra-thin chips. An ultra-thin (<; 20 μm) single-crystal silicon N-LDMOS transistor is realized for Chipfilm™ technology. The device has a breakdown voltage (V
_br
) of more than 100 volts. With an I
_on
/I
_off
ratio of >;10
⁶
, the drain current (I
_d
) is ~ 4 mA for channel width (W) = 50 μm and channel length (L) = 10 μm. The process flow is fully compatible with conventional high-voltage CMOS process.