Multi-$V_{T}$ UTBB FDSOI Device Architectures for Low-Power CMOS Circuit

This paper analyzes the potential of fully depleted silicon-on-insulator (FDSOI) technology as a multiple threshold voltage V
_T
platform for digital circuits compatible with bulk complementary metal-oxide-semiconductor (CMOS). Various technology options, such as gate materials, buried oxide thickness, back plane doping type, and back biasing, were investigated in order to achieve a technology platform that offers at least three distinct
V
_T
options (high-
V
_T
, standard-
V
_T
, and low-
V
_T
). The multi-
V
_T
technology platform highlighted in this paper was developed with standard CMOS circuit design constraints in mind; its compatibility in terms of design and power management techniques, as well as its superior performance with regard to bulk CMOS, are described. Finally, it is shown that a multi-
VT
technology platform based on two gate materials offers additional advantages as a competitive solution. The proposed approach enables excellent channel electrostatic control and low
VT
variability of the FDSOI process. The viability of the proposed concept has been studied through technology computer-aided design simulations and demonstrated through experimental measurements on 30-nm gate length devices.