Gate oxide damage measured with a unique GOI structure

Presents studies of charge-up damage during arsenic implants of GOI wafers with 150 /spl Aring/ gate oxide. Each GOI wafer consists of a total of 510 die and each die has over 4 million gate oxide structures. This test structure is extremely sensitive to charge-up due to the large number of gates. 75 die are used for breakdown voltage (Vb) measurement. Charge-up is shown to be influenced by arc current and guide tube voltage in the 9500 Plasma Flood System (PFS). A model is proposed to explain how guide tube potential affects the spatial distribution of positive ions and electrons in the Plasma Flood System. The level of charging damage was reduced and a wide operation window was identified using this unique GOI structure.