Guard Ring Simulations for n-on-p Silicon Particle Detectors

We propose a new guard ring geometry for n-on-p silicon particle detectors for high luminosity applications. The performance of the guard ring structure is evaluated with simulations up to a radiation fluence of 1 x 10
¹⁵
n
_eq
/cm
²
using an existing three level trap model for p-type FZ silicon. The post-irradiation performance improvement of guard rings with floating field plates pointing towards the sensitive region is demonstrated. The breakdown behavior of the guard ring structure is studied as a function of oxide charge, field plate length, and oxide thickness.