Novel self-limiting program scheme utilizing N-channel select transistors in P-channel DINOR flash memory

This paper describes a novel self-limiting program scheme applying N-channel select transistors in the P-channel DINOR flash memory, which makes it possible to maintain the high programming throughput even for future lower-voltage flash memories. Using this scheme, programming stops automatically at the desired threshold voltage state without any conventional verify operations. Moreover, the width of the additional applied pulses is a very short 0.1 /spl mu/s and therefore it hardly degrades the programming speed at all. This novel scheme is expected to become a key technology for realization of the future, high-performance, lower-supply-voltage P-channel DINOR flash memory.