Resistive switching in TiN/HfO2/Ti/TiN MIM devices for future nonvolatile memory applications

Bipolar resistive switching in TiN/HfO
₂
/Ti/TiN devices using a CMOS technology process is demonstrated. The performance metrics include a retention time >10
⁵
s and a cycling endurance in dc sweep mode >10
²
. By controlling either the set current I
_set
or by setting an appropriate stop voltage V
_stop
, the devices hold the potential for multilevel operation. The results suggest that HfO
₂
-based MIM devices with Si CMOS compatible metal electrodes may be well suited for future embedded nonvolatile memory applications.