Logic performance evaluation and transport physics of Schottky-gate III–V compound semiconductor quantum well field effect transistors for power supply voltages (VCC) ranging from 0.5v to 1.0v

In this paper for the first time, the logic performance of Schottky-gate In
_0.7
Ga
_0.3
As QWFETs is measured and evaluated against that of advanced Strained Si MOSFETs from Vcc = 0.5 to 1.0V. The QWFET is shown to have measured drive current gain over the Si MOSFET for the entire Vcc range. Effective velocity (V
_eff
) of the QWFET exhibits 4.6X-3.3X gain over the Si MOSFET. The high V
_eff
enables 65% intrinsic drive current gain at V
_CC
= 0.5V and 20% gain at V
_CC
= 1.0V for the In
_0.7
Ga
_0.3
As QWFET over that of Strained Si, despite 2.5x lower charge density.