Determination of Transient Response of a Drift Transistor Using the Diffusion Equation

A mathematical model of a drift transistor has been constructed which enables us to study the time required for collector current to reach a steady value in response to a step function of current introduced at the emitter. IBM germanium drift transistors of the PNP type are being investigated. Various base widths and resistivities are being considered. The models devised are suitable for computation by electronic computers.