Zero-bias Si backward diodes detectors incorporating P and B δ-doping layers grown by chemical vapor deposition

For the first time, CVD-grown Si only backward diode detectors incorporating δ-doping planes were demonstrated. The best performance of curvature coefficient of 16 V
^-1
with a junction resistance of 14 kΩ was shown. By the successful technology transfer from LT-MBE to CVD, the eventual placement of optimized CVD-grown detectors monolithically integrated with 300 mm CMOS platform to fabricate large area focal plane arrays with low cost is now possible.