A new current sensor based on MagFET highly immune to EMI

This paper deals with the susceptibility to electromagnetic interference of CMOS integrated current sensors for power transistor current monitoring. Conventional integrated solution are first considered, hence a new integrated current sensor based on the Hall effect in MOS transistors (MagFET) is proposed. The susceptibility to radio frequency interference of a conventional (wired) current sensor and that of the MagFET-based solution is discussed.