Fabrication and HighTemperature Characteristics of IonImplanted GaAs Bipolar Transistors and RingOscillators

GaAs bipolar transistors and ring-oscillators were fabricated by ion implantation into VPE structures. The transistor and circuit performance was tested between 25°C and 400°C. Leakage currents determine the useful temperature range. Present GaAs circuits fail at approximately 390°C due to the metallization technology.