MOS Components of IGBT

• General Considerations

• MOS Structure Analysis and Threshold Voltage

• Current-Voltage Characteristics of MOSFET; Transconductance and Drain Resistance

• On-Resistance Model of DMOSFET and UMOSFET

• MOSFET Equivalent Circuit and Switching Times

• Safe Operating Area (SOA)

• Neutron and Gamma-Ray Damage Effects

• Thermal Behavior of MOSFET

• DMOSFET Cell Windows and Topological Designs

• Summary and Trends

• Review Exercises

• References

• Appendix 3.1: Derivation of Eqs. (3.2a) and (3.2b)

• Appendix 3.2: Derivation of Eq. (3.7)

• Appendix 3.3: Derivation of the Equations for Bulk Semiconductor Potential ?>B and the Surface Charge Qs at the Point of Transition into Strong Inversion

• Appendix 3.4: Derivation of Eqs. (3.33)-(3.36)

• Appendix 3.5: Derivation of Eq. (3.39)

• Appendix 3.6: Derivation of Eq. (3.49)