Abstract:
We report a new nanodot MOSFET, based on the use of Bulk wafer and Silicon-On -Nothing technology, requiring neither CMP nor extra photo-lithographic step. SRAM-applicati...Show MoreMetadata
Abstract:
We report a new nanodot MOSFET, based on the use of Bulk wafer and Silicon-On -Nothing technology, requiring neither CMP nor extra photo-lithographic step. SRAM-application oriented nanodot devices were fabricated using this new process. Record performance among the nanometric gate-all-around MOSFET state-of-the-art is obtained thanks to a high quality transport.
Published in: 2009 Symposium on VLSI Technology
Date of Conference: 15-17 June 2009
Date Added to IEEE Xplore: 11 August 2009
Print ISBN:978-1-4244-3308-7
ISSN Information:
Conference Location: Kyoto, Japan
Contents 