Piezoresistive sensor technology for RFMEMS using p-type polycrystalline diamond

Design, simulation, fabrication and testing of p-type polycrystalline diamond (poly-C) piezoresistive RFMEMS is reported for the first time. The use piezoresistive detection in RFMEMS can lead to an output impedance in the ranges of 20 - 500 Omega and several MOmega for intra- and inter-grain piezoresistors, respectively. The inter-grain gauge factor of the poly-C film with a resistivity of 22 Omega ldr cm was estimated to be over 20. An Ohmic contact with a contact resistance of 5.21 MOmega was achieved by using a highly-doped poly-C interlayer between metal and lightly-doped piezoresistor.