Forming-free HfO2 bipolar RRAM device with improved endurance and high speed operation

In this paper, the bipolar resistive switching memory using HfO
₂
film with a TiN/Ti bi-layer electrode is reported. A robust endurance (>106 cycles) and long data retention (>10 years at 200degC) of this memory device was achieved. The memory also shows fast operation speed (~10 ns), low operation power and capability of multi-level operation.