Abstract:
A large electro-optic bandwidth Electro-absorption Modulated laser, with a Semi-Insulating AlGaInAs/InP Buried Heterostructure, has been associated with a 100 Gb/s InP He...Show MoreMetadata
Abstract:
A large electro-optic bandwidth Electro-absorption Modulated laser, with a Semi-Insulating AlGaInAs/InP Buried Heterostructure, has been associated with a 100 Gb/s InP Heterojunction Bipolar Transistor Multiplexing circuit, exhibiting an open eye diagram.
Published in: 2009 Conference on Optical Fiber Communication
Date of Conference: 22-26 March 2009
Date Added to IEEE Xplore: 29 May 2009
ISBN Information:
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