Low-power PSA transistors for microwave communication systems: comparison among bias-dependent models extracted from measured noise and scattering parameters

Due to the increasing interest in extending the frequency limits of silicon devices for telecommunication applications, we have analyzed the performance of different series of advanced polysilicon bipolar transistors. The devices were grouped according to their emitter finger number and were characterized over the 2-6 GHz frequency range in terms of noise, gain and scattering parameters at different bias conditions. A bias-dependent model extraction including noise sources has been subsequently performed for each series and a comparative analysis has been carried out. The results of this analysis point out distinguishing features of this advanced bipolar process which allows for realizing highly competitive bipolar devices for use in telecommunication equipment at low microwave frequencies.