Comparative analysis of subthreshold swing models for different double gate MOSFETs

We have analyzed the different structures of the DG MOSFETs and their potentials in suppressing short channel effects (SCEs). In particular, we have developed compact physics-based model of the subthreshold swing. Asymmetric DG MOSFET shows superior performance in the nanometer region. The new scale length for DG MOSFETs has been derived from the subthreshold swing model (S model). The new scale length is compared with that of the reported values. The developed physics-based model shows better results.