Long-Wavelength Quantum-Dot Infrared Photodetectors With Operating Temperature Over 200 K

We demonstrate the high-temperature operation of confinement enhanced dots-in-a-well (CE-DWELL) quantum-dot infrared photodetectors (QDIPs). The thin Al
_0.3
Ga
_0.7
As barrier layer added above the InAs QDs greatly improve the lateral confinement of QD states in the In
_0.15
Ga
_0.85
As DWELL structure and the device performance. With better device parameters of CE-DWELL, it is possible to achieve high quantum efficiency, high operating temperature, and long-wavelength detection at the same time.