New profiled silicon PIN photodiode for scintillation detector

Silicon photodiodes (planar PIN) are employed for the readout of scintillation shower counters. We have already reported on a new doping method called molecular layer doping (MLD) which has been developed for very large scale integrated (VLSI) technologies. In this study, several types of PIN photodiodes, in which a p/sup +/ layer was formed by MLD (MLD-PIN) or BF/sub 2/ ion implantation (BF/sub 2/ I/I-PIN), have been examined. The MLD-PIN has a shallow p/sup +/ junction depth (x/sub j/) with sufficient high surface concentration, and simply and easily provides good performance for short-wavelength photosensitivity.<
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