Development of radiation hard N+-on-P silicon microstrip sensors for super LHC

Radiation tolerance up to 10
¹⁵
1-MeV n
^eq
/cm
²
is required for the silicon microstrip sensors to be operated at the Super LHC experiment. As a candidate for such sensors, we are investigating non-inverting n
⁺
-on-p sensors. We manufactured sample sensors of 1 times 1 cm in 4" and 6" processes with implementing different interstrip electrical isolation structures. Industrial high resistive p-type wafers from FZ (float zone) and MCZ (magnetic Czochralski) growth are tested. They are different in crystal orientations <100> and <111> with different wafer resistivities. The sensors were irradiated with 70-MeV protons and evaluated on the leakage current increase, noise figures, electrical strip isolation, full depletion voltage evolution, and charge collection efficiency.