A novel model for an integrated rf CMOS schottky diode

In this paper an interdigital n-type CoSi
₂
-Si Schottky diode is fabricated in SMIC 0.18 mum RF CMOS process. A novel and accurate Schottky diode model has been developed base on the DC and RF measured data. In this novel model the losses due to parasitic capacitance dielectric and metal plate are considered. It is shown that the suggested novel model fits the measurement very well for different voltage biases over the wide frequency range of 0.05 GHz to 8.5 GHz. A type of four stages charge pump is designed using this new Schottky diode model, the design charge pump can get efficiency of 40%.