High Power Pseudomorphic Hemts' with Doped Channel

The design principles and technology of growth of pseudomorphic AlGaAs/InGaAs heterostructure with silicon-doped canal for high frequency high power transistors as well as fabrication technology of the transistors were developed. Special attention has been paid to growth of the AlGaAs/InGaAs heterojunction. PHEMTs' with the specific output power of 1.1 W/mm, PAE of 45.6 % and power gain of 6.8 dB at 17.7 GHz have been fabricated.