Stacked Nanowires ΦFET with Independent Gates: A Novel Device for Ultra-dense Low-Power Applications

Based on 3D numerical simulations and on a technological evaluation, we demonstrate the relevance of a new stacked nanowires architecture concept with independent gates, the PhiFET. We study the coupling effects in nanowires controlled by two independent gates. This architecture, proposed for low-power applications, reveals an excellent control of short-channel effects and improved I
_ON
/I
_OFF
ratios compared to FinFET with the same designed width.