250V Integrable Silicon Lateral Trench Power MOSFETs with Superior Specific On-Resistance

A lateral trench power MOSFET in the 250V class, with a reduced specific on-resistance is proposed. Simulation results of an optimized device structure exhibits a low specific on-resistance of 7mΩ-cm
²
, which is 2.5× lower than that of the conventional lateral DMOSFET. Effects of design parameters on the device performance are examined. An improved device structure with reduced sensitivity to process variations is also presented.