Modeling the Mismatch of High-k MIM Capacitors

In this contribution we investigate the matching properties of modern high-k metal-insulator-metal (MIM) capacitors. In particular, we derive a compact physics-based model in order to explain the observed geometry dependence of mismatch. This model is successfully applied to MIM devices processed with Ta
₂
O
₅
and AI
₂
O
₃
as dielectrics.