Modeling of MOSFETs for CMOS RF-IC Design

High-frequency (HF) modeling of MOSFETs for radio-frequency (RF) integrated circuit (IC) design is discussed. Modeling of the quasi-static (QS) and non-quasi-static (NQS) effect is discussed. Through the simulation results of the QS and NQS model with the comparison to the measured data, it is proved that the inclusion of the NQS effect would be a desirable feature for a RF model.