Visible blind p+/p/n-/n+ UV 4H-SiC photodiodes based on 4H-SiC homoepilayers

The p
⁺
/p
^-
/n
^-
/n
⁺
structure ultraviolet 4H-SiC photodiodes with different sizes of active areas have been fabricated and characterized by the I-V characteristics and photoresponse spectra. The statistical leakage current was around 10
^-11
nA at zero bias and it was less than 10
^-9
A at -5 V obtained from the 100 times 100 mum
²
size samples. The photoresponse spectra, measured at different biases, showed high detectivity at ultraviolet range of 330-360nm, which means that the photodiodes have excellent performance in the detection of the solar ultraviolet light