NMOS and PMOS Metal Gate Transistors with Junctions Activated by Laser Annealing

We demonstrate for the first time the integration of metal gate electrode and non-melt laser annealed junctions in both NMOS and PMOS transistors. We report the highest drive current so far in laser annealed devices with good short channel effects (SCE) control down to 40nm gate length. Overlap length is quantified by CV and SSRM, values of 2 nm for both NMOS and PMOS laser-annealed transistors are reported for the first time