A 47 GHz bipolar process with an ultra shallow ion implanted base of 35 nm

Based on the bipolar process B6HF/1/l a scaled down version-further on denoted as B6HF*-was developed featuring 47 GHz cutoff-frequency for a 0.3 /spl mu/m effective emitter size transistor. To obtain this performance aggressive implantation and thermal budget strategies had been set up. The transistor base width has been reduced down to 35 nm, the lowest value ever reported for a conventional implanted base. Investigations with respect to process and device stability.<
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