On the modelling of sub-micrometric pseudomorphic GaAs/In/sub 0.15/Ga/sub 0.85/As/Al/sub x/Ga/sub 1-x/As HEMTs

A model for the transport of 2D/3D electron gases by an electric field is presented. It considers 2D/3D particle interchanges by introducing an artificial scattering event that involves two parameters to be adjusted by the experimental stationary velocity-field relationship. These parameters are the rate of this scattering and the energy in the well at which it takes place. Using this model we investigate non stationary effects in sub-micrometer gate length devices. We conclude that though they exist under the gate, these effects are especially important in the high field region at the n/sup +/n drain access that has to be carefully modelled.<
>