AlInAs/GaInAs pseudomorphic HEMTs: Design and performances

The search for suitable ways to improve high electron mobility transistor (HEMT) device performance has stimulated research on pseudomorphic layer structures. Parameters in the layer structure which will effect a foreseeable improvement on device performance are discussed. Recent interest has been focused on pseudomorphic InAlAs/InGaAs HEMTs. The present status in this field is reviewed and new facts based on HEMT simulations and experimental results are discussed. A main focus of the simulation is the design of the channel to allow a maximum InAs mole fraction while maintaining excellent device performance.<
>