Neutron radiation effects in HEMTs

HEMTs have been irradiated with fast neutrons at fluences up to 10/sup 16/n/cm/sup 2/. At large enough fluences the two dimensional electron gas vanishes and the devices turn into AlGaAs MESFETs. The majority carrier traps responsible for the degradation have been investigated. A charge control model has been introduced to simulate the shift of the threshold voltage and to determine the carrier removal rate in the AlGaAs donor layer.<
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