A very low operation current InGaAsP/InP total internal reflection optical switch using p/n/p/n current blocking layers

A very low operation current (20 mA) has been achieved for the first time with an InGaAsP/InP total-internal-reflection optical switch. The optical switch is fabricated on an n/sup +/-InP substrate using p/n/p/n current blocking layers. This switch has a large effective contact area and is a self-aligned structure. This is a promising result for making optical integrated circuits.<
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