Noise measurements on radiation-hardened CMOS transistors

The authors present a measurement of the spectral noise density of radiation-hardened CMOS transistors. The motivation of this work is the design of a low-power, low-noise frontend with fast shaping for a silicon microstrip tracking detector for the SSC (Superconducting Super Collider). NMOS and PMOS transistors with widths varying from 75 mu m to 1332 mu m and lengths of 1.2, 2.2 and 3.2 mu m produced by UTMC (United Technology Microelectronics Center) were subjected to total /sup 60/Co doses of up to 5 Mrad. Radiation effects on the transconductance and on both the white and the frequency-dependent noise are described.<
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