Performance study of InGaAs/InAlAs/InP MODFETs on heterostructures grown by OMVPE and MBE

The authors have fabricated and characterized MODFETs on OMVPE (organometallic vapor-phase epitaxy)-grown InAlAs/InGaAs/InP heterostructures. Excellent DC and RF characteristics were obtained. Extrinsic DC transconductance as high as 1020 mS/mm and a unity current gain cut-off frequency, f/sub T/, of 114 GHz were obtained for devices with 0.27- mu m gate-length. An effective saturation velocity of 2.0*10/sup 7/ cm/s was obtained for these devices. These results are shown to be comparable to the best results reported in the literature for MODFETs fabricated in MBE (molecular-beam epitaxy)-grown heterostructures.<
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