Field electron emission from gated Si tip arrays with DLC apexes

We report the fabrication and characterization of well-defined gated Si microtip arrays with diamond-like carbon (DLC) apexes. It was found that for a 40/spl times/40 gated Si tip array with DLC apexes, an emission current density up to 0.23 A/cm/sup 2/ can be obtained at an applied gate voltage of 200 V. The turn-on gate voltage of the devices is fall in a range of 38-50 V.