A novel substrate hot electron and hole injection structure with a double-implanted buried-channel MOSFET

Substrate hot electron and hole injection into the same gate insulator is achieved with a double ion-implanted buried-channel n-channel MOSFET device. Under the gate, the impurity profile is n-on-n/sup +/ on a p substrate. The n-on-n/sup +/ buried channel, which is formed by implanting the phosphorus ions twice (first, deep heavy implant and, second, shallow and light implant), makes it possible to inject hot electrons in the accumulation region and hot holes in the inversion region of the device operation. For the case of electron injection, a forward-biased diode adjacent to the stressed device supplies the electrons into the junction space-charge layer between n/sup +/ and p bulk (source and drain are grounded and bulk is held at a large negative voltage). For the case of hot hole injection, the gate is biased to provide a hole inversion layers at the interface.